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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4055 DESCRIPTION With TO-220C package High voltage,High speed switching High reliability PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter Open base VALUE 600 UNIT V V V A A A A W ae ae Collector-emitter voltage Emitter-base voltage Collector current INC Collector current-peak Base current E SEM ANG H TC=25ae Open collector DUC CON I 450 7 8 16 4 8 60 TOR Base current-peak Collector dissipation Junction temperature Storage temperature 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A At rated voltage At rated voltage At rated voltage IC=4A ; VCE=5V IC=1mA ; VCE=5V IC=0.8A ; VCE=10V 10 5 MIN 450 TYP. 2SC4055 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.0 1.5 0.1 0.1 0.1 V V mA mA mA Switching times Ton tstg tf Fall time Turn-on time INC Storage time E SEM ANG H OND IC TOR UC 20 0.5 2.0 0.2 MHz |I |I |I s s s IC=4A;IB1=0.8A; IB2=1.6A;RL=37.5| VBB2=4V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4055 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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